IXFH230N10T IXYS, IXFH230N10T Datasheet - Page 6

• Manufacturer Part Number: IXFH230N10T
• Description: MOSFET N-CH 100V 230A TO-247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH230N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 230A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 15300pF @ 25V
• Power - Max: 650W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 230
• Rds(on), Max, Tj=25°c, (?): 0.0047
• Ciss, Typ, (pf): 15300
• Qg, Typ, (nc): 250
• Trr, Typ, (ns): 82
• Trr, Max, (ns): -
• Pd, (w): 650
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFH230N10T
Fig. 19. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_230N10T(7V)1-27-09