IXFH230N10T IXYS, IXFH230N10T Datasheet - Page 4

• Manufacturer Part Number: IXFH230N10T
• Description: MOSFET N-CH 100V 230A TO-247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH230N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 230A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 15300pF @ 25V
• Power - Max: 650W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 230
• Rds(on), Max, Tj=25°c, (?): 0.0047
• Ciss, Typ, (pf): 15300
• Qg, Typ, (nc): 250
• Trr, Typ, (ns): 82
• Trr, Max, (ns): -
• Pd, (w): 650
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
280
240
200
160
120
300
250
200
150
100
100
80
40
50
0
0
3.0
0.3
0
0.4
f
= 1 MHz
5
3.5
Fig. 9. Forward Voltage Drop of
0.5
10
Fig. 7. Input Admittance
T
4.0
J
0.6
= 150ºC
Fig. 11. Capacitance
Intrinsic Diode
15
T
V
0.7
J
GS
4.5
V
V
= 150ºC
SD
DS
- 40ºC
- Volts
25ºC
0.8
- Volts
20
- Volts
5.0
0.9
T
25
J
= 25ºC
C iss
C oss
C rss
1.0
5.5
30
1.1
6.0
35
1.2
6.5
1.3
40
1,000.0
100.0
10.0
280
240
200
160
120
1.0
0.1
10
80
40
9
8
7
6
5
4
3
2
1
0
0
0
1
0
R
External lead Limit
DS(on)
T
T
Single Pulse
Fig. 12. Forward-Bias Safe Operating Area
V
I
I
J
C
D
G
DS
25
= 175ºC
= 25ºC
= 115A
= 10mA
= 50V
40
Limit
50
Fig. 8. Transconductance
80
75
Fig. 10. Gate Charge
10
Q
10ms
G
100
V
100ms
I
- NanoCoulombs
DS
120
D
- Amperes
IXFH230N10T
- Volts
125
DC
160
150
100
175
25µs
100µs
1ms
200
T
J
200
= - 40ºC
IXYS REF: F_230N10T(7V)1-27-09
150ºC
25ºC
240
225
1000
250
280