IXFH230N10T IXYS, IXFH230N10T Datasheet - Page 3

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IXFH230N10T

Manufacturer Part Number
IXFH230N10T
Description
MOSFET N-CH 100V 230A TO-247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH230N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.7 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
230A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
15300pF @ 25V
Power - Max
650W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
230
Rds(on), Max, Tj=25°c, (?)
0.0047
Ciss, Typ, (pf)
15300
Qg, Typ, (nc)
250
Trr, Typ, (ns)
82
Trr, Max, (ns)
-
Pd, (w)
650
Rthjc, Max, (k/w)
0.23
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2009 IXYS CORPORATION, All rights reserved
240
220
200
180
160
140
120
100
240
220
200
180
160
140
120
100
3.0
2.6
2.2
1.8
1.4
1.0
0.6
80
60
40
20
80
60
40
20
0
0
0.0
0.0
0
Fig. 5. R
V
0.1
0.2
GS
25
= 10V
0.2
0.4
15V
50
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
0.3
0.6
75
- - - -
0.4
100 125 150
0.8
vs. Drain Current
Normalized to I
0.5
1.0
I
V
V
D
V
@ 150ºC
@ 25ºC
GS
DS
DS
- Amperes
0.6
= 15V
1.2
- Volts
- Volts
V
GS
10V
9V
8V
= 15V
175 200 225 250 275 300
0.7
1.4
10V
8V
7V
0.8
1.6
D
= 115A Value
0.9
1.8
6V
5V
7V
6V
5V
1.0
2.0
T
T
J
J
= 175ºC
= 25ºC
1.1
2.2
1.2
2.4
350
300
250
200
150
100
180
160
140
120
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
80
60
40
20
0
0
0.0
-50
-50
Fig. 6. Drain Current vs. Case Temperature
Fig. 4. R
V
GS
0.5
V
Fig. 2. Extended Output Characteristics
-25
-25
GS
= 15V
External Lead Current Limit
10V
= 10V
8V
1.0
DS(on)
0
0
vs. Junction Temperature
T
1.5
C
6V
5V
7V
T
- Degrees Centigrade
25
25
J
Normalized to I
- Degrees Centigrade
2.0
V
DS
50
@ 25ºC
50
- Volts
2.5
IXFH230N10T
75
75
I
3.0
D
= 230A
100
100
D
3.5
= 115A Value
125
125
4.0
I
D
= 115A
150
150
4.5
5.0
175
175

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