IRF1607PBF International Rectifier, IRF1607PBF Datasheet - Page 3

• Manufacturer Part Number: IRF1607PBF
• Description: MOSFET N-CH 75V 142A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1607PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 85A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 142A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 320nC @ 10V
• Input Capacitance (ciss) @ Vds: 7750pF @ 25V
• Power - Max: 380W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 142 A
• Gate Charge, Total: 210 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 380 W
• Resistance, Drain To Source On: 0.0058 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 84 ns
• Time, Turn-on Delay: 22 ns
• Transconductance, Forward: 79 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 142 A
• Mounting Style: Through Hole
• Gate Charge Qg: 210 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1607PBF

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1000
100
Fig 3. Typical Transfer Characteristics
1000
Fig 1. Typical Output Characteristics
10
100
1
10
4.0
1
0.1
T = 175 C
TOP
BOTTOM 4.5V
J
5.0
V
GS
V DS , Drain-to-Source Voltage (V)
VGS
°
T = 25 C
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
J
, Gate-to-Source Voltage (V)
6.0
1
°
4.5V
7.0
20µs PULSE WIDTH
Tj = 25°C
V
20µs PULSE WIDTH
DS
8.0
= 25V
10
9.0
10.0
100
1000
100
Fig 2. Typical Output Characteristics
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
142A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
1
20 40 60 80 100 120 140 160 180
4.5V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100