IRF1607PBF International Rectifier, IRF1607PBF Datasheet
IRF1607PBF
Specifications of IRF1607PBF
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IRF1607PBF Summary of contents
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... Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G ® Power MOSFETs @ 10V GS @ 10V GS See Fig.12a, 12b, 15, 16 IRF1607PbF ® HEXFET Power MOSFET 75V DSS R = 0.0075Ω DS(on 142A† TO-220AB Max. Units 142† 100† ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 100 BOTTOM 4.5V 10 4.5V 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ° 175 ...
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0V MHZ C iss = rss = C gd 10000 C oss = Ciss 8000 6000 Coss 4000 2000 ...
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LIMITED BY PACKAGE 120 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 ...
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D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...
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Duty Cycle = Single Pulse 0.01 100 0.05 0. 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 1400 TOP Single Pulse BOTTOM 10% Duty Cycle 1200 85A 1000 800 600 400 200 0 25 ...
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D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent For N-channel 8 + • • ƒ • - „ • • • P.W. ...
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EXAMPLE : T HIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 SEMBLY LINE "C" Note: "P" inas s embly line pos ition indicates "Lead - F ree" TO-220AB packages are not recommended ...