STB21N65M5 STMicroelectronics, STB21N65M5 Datasheet - Page 14

• Manufacturer Part Number: STB21N65M5
• Description: MOSFET N-CH 650V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB21N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 100V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 10.7 A, 17 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 50 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10562-2

Package mechanical data
14/18
Dim
L20
L30
∅P
D1
H1
b1
e1
L1
J1
A
D
E
Q
b
e
F
L
c
TO-220 type A mechanical data
Doc ID 15427 Rev 3
15.25
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
16.40
28.90
1.27
mm
Typ
STB/F/I/P/W21N65M5
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14