STB21N65M5 STMicroelectronics, STB21N65M5 Datasheet - Page 12
![MOSFET N-CH 650V 17A D2PAK](/photos/29/5/290510/d2pak_sml.jpg)
STB21N65M5
Manufacturer Part Number
STB21N65M5
Description
MOSFET N-CH 650V 17A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB21N65M5.pdf
(18 pages)
Specifications of STB21N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 100V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohm
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
10.7 A, 17 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
50 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10562-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB21N65M5
Manufacturer:
STM
Quantity:
3 139
Package mechanical data
12/18
Dim
A1
b1
c2
e1
L1
L2
A
D
E
b
c
e
L
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
Min
10
13
Doc ID 15427 Rev 3
I²PAK (TO-262) mechanical data
mm
Typ
10.40
Max
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Min
STB/F/I/P/W21N65M5
inch
Typ
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
Max