IRF7799L2TRPBF International Rectifier, IRF7799L2TRPBF Datasheet - Page 8
![MOSFET N-CH 250V DIRECTFET L8](/photos/28/10/281082/irf7739l2tr1pbf_sml.jpg)
IRF7799L2TRPBF
Manufacturer Part Number
IRF7799L2TRPBF
Description
MOSFET N-CH 250V DIRECTFET L8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7799L2TRPBF.pdf
(11 pages)
Specifications of IRF7799L2TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
38 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
6714pF @ 25V
Power - Max
4.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
35 A
Power Dissipation
125 W
Gate Charge Qg
110 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7799L2TRPBF
Manufacturer:
UCHIHASHI
Quantity:
10 000
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
8
D
D
D
G
S
S
S
S
D = DRAIN
G = GATE
S = SOURCE
S
S
S
S
D
D
D
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