IRF7799L2TRPBF International Rectifier, IRF7799L2TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7799L2TRPBF
• Description: MOSFET N-CH 250V DIRECTFET L8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7799L2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 38 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 165nC @ 10V
• Input Capacitance (ciss) @ Vds: 6714pF @ 25V
• Power - Max: 4.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 35 A
• Power Dissipation: 125 W
• Gate Charge Qg: 110 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 10. Typical Source-Drain Diode Forward Voltage
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Fig 12. Maximum Drain Current vs. Case Temperature
1000
100
0.1
10
40
30
20
10
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
25
T J = 175°C
TJ = 25°C
TJ = -40°C
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
75
100
Fig 14. Maximum Avalanche Energy Vs. Drain Current
125
V GS = 0V
1400
1200
1000
800
600
400
200
0
150
25
Starting T J , Junction Temperature (°C)
175
50
1
75
100
TOP
BOTTOM 21A
125
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.1
10
1
-75 -50 -25
1
I D
1.33A
2.53A
150
Tc = 25°C
Tj = 175°C
Single Pulse
Fig 13. Typical Threshold Voltage vs.
V DS , Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
I D = 250µA
ID = 1.0mA
ID = 1.0A
DC
175
T J , Temperature ( °C )
0
10msec
Junction Temperature
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
25 50 75 100 125 150 175
1msec
100µsec
100
1000
5