IRF7799L2TRPBF International Rectifier, IRF7799L2TRPBF Datasheet - Page 5
![MOSFET N-CH 250V DIRECTFET L8](/photos/28/10/281082/irf7739l2tr1pbf_sml.jpg)
IRF7799L2TRPBF
Manufacturer Part Number
IRF7799L2TRPBF
Description
MOSFET N-CH 250V DIRECTFET L8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7799L2TRPBF.pdf
(11 pages)
Specifications of IRF7799L2TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
38 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
6714pF @ 25V
Power - Max
4.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
35 A
Power Dissipation
125 W
Gate Charge Qg
110 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7799L2TRPBF
Manufacturer:
UCHIHASHI
Quantity:
10 000
Fig 10. Typical Source-Drain Diode Forward Voltage
www.irf.com
Fig 12. Maximum Drain Current vs. Case Temperature
1000
100
0.1
10
40
30
20
10
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
25
T J = 175°C
TJ = 25°C
TJ = -40°C
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
75
100
Fig 14. Maximum Avalanche Energy Vs. Drain Current
125
V GS = 0V
1400
1200
1000
800
600
400
200
0
150
25
Starting T J , Junction Temperature (°C)
175
50
1
75
100
TOP
BOTTOM 21A
125
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.1
10
1
-75 -50 -25
1
I D
1.33A
2.53A
150
Tc = 25°C
Tj = 175°C
Single Pulse
Fig 13. Typical Threshold Voltage vs.
V DS , Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
I D = 250µA
ID = 1.0mA
ID = 1.0A
DC
175
T J , Temperature ( °C )
0
10msec
Junction Temperature
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
25 50 75 100 125 150 175
1msec
100µsec
100
1000
5