IRF7799L2TRPBF International Rectifier, IRF7799L2TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7799L2TRPBF
• Description: MOSFET N-CH 250V DIRECTFET L8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7799L2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 38 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 165nC @ 10V
• Input Capacitance (ciss) @ Vds: 6714pF @ 25V
• Power - Max: 4.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 35 A
• Power Dissipation: 125 W
• Gate Charge Qg: 110 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
DS(on)
GS(th)
G
iss
oss
rss
oss
oss
SD
g
Q
Q
Q
Q
sw
oss
rr
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
g
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
–––
54
6714
5063
1412
0.12
0.73
36.3
33.5
73.9
26.6
–––
–––
–––
–––
–––
–––
110
606
157
217
–––
–––
–––
132
4.0
-13
5.7
32
26
39
39
45
33
2118
-100
–––
–––
–––
100
–––
165
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
140
198
5.0
1.3
38
20
35
1
mV/°C
V/°C
1mA
mΩ
µA
nA
nC
nC
nC
ns
pF
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 9
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
GS
GS
J
J
G
= 21A
= 21A
=6.2Ω
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= V
= 250V, V
= 250V, V
= 20V
= -20V
= 50V, I
= 125V
= 10V
= 16V, V
= 125V, V
= 0V
= 25V
= 0V, V
= 0V, V
GS
, I
D
Conditions
D
Conditions
S
F
DS
DS
D
D
= 250µA
GS
= 21A, V
= 21A, V
= 250µA
= 21A
= 21A
GS
GS
GS
= 1.0V, f=1.0MHz
= 80V, f=1.0MHz
= 0V
i
= 0V
= 0V, T
= 10V
i
D
DD
GS
www.irf.com
= 2mA
J
= 50V
= 0V
i
= 125°C
i