IRF3205PBF International Rectifier, IRF3205PBF Datasheet - Page 2

• Manufacturer Part Number: IRF3205PBF
• Description: MOSFET N-CH 55V 110A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3205PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 62A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 146nC @ 10V
• Input Capacitance (ciss) @ Vds: 3247pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 110 A
• Gate Charge, Total: 146 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 50 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 44 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 98 A
• Mounting Style: Through Hole
• Gate Charge Qg: 97.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3205PBF

Source-Drain Ratings and Characteristics
IRF3205
Electrical Characteristics @ T

ƒ
‚
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
E
I
I
V
t
Q
t
L
L
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
V
fs
D
S
2
(BR)DSS
GS(th)
AS
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
I
T
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
SD
Starting T
J
G
= 25 , I
175°C
62A, di/dt
/ T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 138µH
AS
= 62A. (See Figure 12)
207A/µs, V

Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚
„
…
†
‡
This is a calculated value limited to T
Pulse width
Calculated continuous current based on maximum allowable
This is a typical value at device destruction and represents
operation outside rated limits.
junction temperature. Package limitation current is 75A.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1050† 264‡ mJ
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
55
44
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.057 –––
3247 –––
–––
–––
–––
143
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
101
781
211
4.5
14
50
65
7.5
69
400µs; duty cycle
–––
110
–––
–––
250
100
146
–––
–––
–––
–––
–––
–––
–––
390
104
215
8.0
4.0
1.3
25
35
54
V/°C
m
nC
µA
nA
nC
ns
nH
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
D
D
AS
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= 62A
= 62A
= 25°C, I
= 25°C, I
= 62A, L = 138 H
= 4.5
2%.
= V
= 25V, I
= 55V, V
= 44V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 28V
= 10V, See Fig. 10 „
= 0V
J
GS
= 175°C.
, I
D
S
F
D
D
D
Conditions
= 250µA
GS
GS
Conditions
= 62A
= 62A, V
= 250µA
= 62A„
= 62A
„
= 0V
= 0V, T
D
GS
= 1mA
„
J
www.irf.com
= 150°C
= 0V
G
G
S
„
+L
D
D
S
)
S
D