IRF3205PBF International Rectifier, IRF3205PBF Datasheet

MOSFET N-CH 55V 110A TO-220AB

IRF3205PBF

Manufacturer Part Number
IRF3205PBF
Description
MOSFET N-CH 55V 110A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF3205PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 62A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
146nC @ 10V
Input Capacitance (ciss) @ Vds
3247pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
110 A
Gate Charge, Total
146 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
8 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
50 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
44 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
98 A
Mounting Style
Through Hole
Gate Charge Qg
97.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF3205PBF

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IRF3205PBF Summary of contents

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... IRF3205PbF 8 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. ...

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