IRF3205PBF International Rectifier, IRF3205PBF Datasheet

MOSFET N-CH 55V 110A TO-220AB

IRF3205PBF

Manufacturer Part Number
IRF3205PBF
Description
MOSFET N-CH 55V 110A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRF3205PBF.pdf (9 pages)
2.IRF3205PBF.pdf (3 pages)

Specifications of IRF3205PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 62A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
146nC @ 10V
Input Capacitance (ciss) @ Vds
3247pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
110 A
Gate Charge, Total
146 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
8 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
50 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
44 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
98 A
Mounting Style
Through Hole
Gate Charge Qg
97.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF3205PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF3205PBF
Manufacturer:
IR
Quantity:
25 000
Company:
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Part Number:
IRF3205PBF
Manufacturer:
IR
Quantity:
2 569
Company:
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Part Number:
IRF3205PBF
Manufacturer:
ST
0
Company:
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Part Number:
IRF3205PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Amily Shenzhen XNWY Technology Co., Ltd Amily Shenzhen XNWY Technology Co., Ltd
Part Number:
IRF3205PBF
0
Company:
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Part Number:
IRF3205PBF
Quantity:
10 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF3205PBF
Quantity:
6 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF3205PBF
Quantity:
50 000
www.irf.com
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
Description
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
R
R
R
I
I
I
P
V
I
E
dv/dt
T
T
D
D
DM
AR
J
STG
D
GS
AR
JC
CS
JA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
on-resistance per silicon area.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
®
Power MOSFETs from International
Parameter
Parameter

The low thermal

ƒ
GS
GS

@ 10V
@ 10V
This
G
Typ.
0.50
300 (1.6mm from case )
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
TO-220AB
Max.
390
200
± 20
110
1.3
5.0
62
20
80
…
®
R
IRF3205
Power MOSFET
DS(on)
Max.
V
I
0.75
–––
D
62
DSS
= 110A
= 8.0m
PD-91279E
= 55V
Units
Units
…
°C/W
W/°C
V/ns
mJ
°C
W
A
V
A
01/25/01
1

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IRF3205PBF Summary of contents

Page 1

Advanced Process Technology l l Ultra Low On-Resistance Dynamic dv/dt Rating l l 175°C Operating Temperature Fast Switching l Fully Avalanche Rated l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low ...

Page 2

IRF3205 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° ...

Page 4

IRF3205 6000 0V, C iss = SHORTED C rss = C gd 5000 C oss = 4000 Ciss 3000 2000 Coss 1000 Crss 0 ...

Page 5

LIMITED BY PACKAGE 100 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Fig 9. Maximum Drain Current Vs. Case Temperature Case Temperature 1 D ...

Page 6

IRF3205 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFETS ...

Page 8

IRF3205 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.11 3) 2.62 (.10 3) 15.24 (.60 0) 14.84 (. 14.09 (.55 5) 13.47 (. .40 (.0 55) 3X ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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