IRL2203NPBF International Rectifier, IRL2203NPBF Datasheet - Page 5

• Manufacturer Part Number: IRL2203NPBF
• Description: MOSFET N-CH 30V 116A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRL2203NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 116A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.007Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 116A
• Power Dissipation: 180W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Mounting Style: Through Hole
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL2203NPBF

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0.01
120
100
0.1
80
60
40
20
0.00001
1
0
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
LIMITED BY PACKAGE
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
1
150
175
0.001
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
≤ 0.1 %
J
≤ 1
0.01
DM
x Z
1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
+
-
5
0.1