IRL2203NPBF International Rectifier, IRL2203NPBF Datasheet - Page 4

• Manufacturer Part Number: IRL2203NPBF
• Description: MOSFET N-CH 30V 116A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRL2203NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 116A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.007Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 116A
• Power Dissipation: 180W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Mounting Style: Through Hole
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL2203NPBF

4
1000
6000
5000
4000
3000
2000
1000
100
0.1
10
1
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
T = 175 C
Drain-to-Source Voltage
J
V
0.4
V
SD
DS
Forward Voltage
°
V
C
C
C
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.8
T = 25 C
=
=
=
=
J
0V,
C
C
C
gs
gd
ds
C rss
C iss
C oss
1.2
+ C
+ C
°
10
f = 1MHz
gd ,
gd
1.6
C
ds
V
SHORTED
GS
2.0
= 0 V
2.4
100
10000
1000
100
10
1
15
12
Fig 8. Maximum Safe Operating Area
9
6
3
0
1
0
Tc = 25°C
Tj = 175°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
I =
D
V DS , Drain-toSource Voltage (V)
60A
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
G
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V
V
DS
DS
40
= 24V
= 15V
FOR TEST CIRCUIT
SEE FIGURE
www.irf.com
100µsec
60
1msec
10msec
13
100
80