IRL2203NPBF International Rectifier, IRL2203NPBF Datasheet

IRL2203NPBF

Manufacturer Part Number

IRL2203NPBF

Description

MOSFET N-CH 30V 116A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheet

1.IRL2203NPBF.pdf (9 pages)

Specifications of IRL2203NPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

7 mOhm @ 60A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

116A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

60nC @ 4.5V

Input Capacitance (ciss) @ Vds

3290pF @ 25V

Power - Max

180W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.007Ohm

Drain-source On-volt

30V

Gate-source Voltage (max)

±16V

Continuous Drain Current

116A

Power Dissipation

180W

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

3 +Tab

Package Type

TO-220AB

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

10 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

16 V

Mounting Style

Through Hole

Gate Charge Qg

40 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRL2203NPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

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Bonase Electronics (HK) Co., Limited

Part Number:

IRL2203NPBF

Manufacturer:

Quantity:

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Company:

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Part Number:

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Manufacturer:

Quantity:

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Company:

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Part Number:

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Company:

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Part Number:

IRL2203NPBF

Quantity:

25 780

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Absolute Maximum Ratings

Thermal Resistance

Advanced HEXFET

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts.

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

www.irf.com

Description

dv/dt

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Power MOSFETs from International

Parameter

The low thermal

@ 10V

Typ.

300 (1.6mm from case )

0.50

–––

IRL2203NPbF

10 lbf•in (1.1N•m)

HEXFET

-55 to + 175

TO-220AB

116

Max.

400

180

± 16

1.2

5.0

‡

Power MOSFET

DS(on)

Max.

0.85

–––

DSS

= 116A‡

= 7.0mΩ

PD - 94953

= 30V

Units

W/°C

°C/W

V/ns

°C

Related parts for IRL2203NPBF

IRL2203NPBF Summary of contents

Page 1

... R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G The low thermal @ 10V GS @ 10V GS ƒ 300 (1.6mm from case ) Typ. 0. 94953 IRL2203NPbF ® HEXFET Power MOSFET 30V DSS R = 7.0mΩ DS(on 116A‡ TO-220AB Max. Units ‡ 116 82 A ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 10 2.7V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 4

1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 C oss 2000 1000 C ...

Page 5

LIMITED BY PACKAGE 100 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 600 500 DRIVER 400 + ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 1 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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