STB200NF04-1 STMicroelectronics, STB200NF04-1 Datasheet - Page 7

• Manufacturer Part Number: STB200NF04-1
• Description: MOSFET N-CH 40V 120A I2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB200NF04-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3512-5

Figure 17: Allowable lav vs. Time in Avalanche
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
P
E
Where:
I
P
t
To derate above 25 °C, at fixed I
Where:
Z
AV
AV
th
D(AVE)
AS(AR)
D(AVE)
= K * R
is the Time in Avalanche
is the Allowable Current in Avalanche
= 0.5 * (1.3 * BV
= P
is the Average Power Dissipation in Avalanche (Single Pulse)
th
D(AVE)
is the value coming from Normalized Thermal Response at fixed pulse width equal to T
* t
AV
DSS
* I
I
AV
AV
AV,
)
= 2 * (T
the following equation must be applied:
jmax
- T
CASE
STP200NF04 - STB200NF04 - STB200NF04-1
) / (1.3 * BV
DSS
* Z
th
)
AV
7/15
.