STB200NF04-1 STMicroelectronics, STB200NF04-1 Datasheet - Page 11

• Manufacturer Part Number: STB200NF04-1
• Description: MOSFET N-CH 40V 120A I2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB200NF04-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3512-5

DIM.
A1
A2
B2
C2
D1
E1
V2
L2
L3
C
D
G
M
R
A
B
E
L
MIN.
2.49
0.03
1.14
0.45
1.23
8.95
4.88
1.27
4.4
0.7
1.4
2.4
10
15
0º
D
TO-247 MECHANICAL DATA
2
mm.
TYP
8.5
0.4
PAK MECHANICAL DATA
8
15.85
MAX.
2.69
0.23
0.93
1.36
9.35
10.4
5.28
1.75
4.6
1.7
0.6
1.4
3.2
STP200NF04 - STB200NF04 - STB200NF04-1
4º
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
MIN.
0.315
0.334
0.015
TYP.
inch
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.208
0.625
0.055
0.068
0.126
MAX.
1
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