STB80NF55L-08-1 STMicroelectronics, STB80NF55L-08-1 Datasheet - Page 7
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STB80NF55L-08-1
Manufacturer Part Number
STB80NF55L-08-1
Description
MOSFET N-CH 55V 80A I2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STB80NF55L-08-1.pdf
(9 pages)
Specifications of STB80NF55L-08-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 4.5V
Input Capacitance (ciss) @ Vds
4350pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB80NF55L-08-1
Manufacturer:
FSC
Quantity:
5 000
Part Number:
STB80NF55L-08-1
Manufacturer:
ST
Quantity:
20 000
DIM.
A1
b1
c2
e1
L1
L2
A
D
E
b
c
e
L
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
MIN.
10
13
TO-262 (I
mm.
TYP
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
2
PAK) MECHANICAL DATA
10.40
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MIN.
TYP.
inch
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
MAX.
7/9