STB80NF55L-08-1 STMicroelectronics, STB80NF55L-08-1 Datasheet - Page 3
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STB80NF55L-08-1
Manufacturer Part Number
STB80NF55L-08-1
Description
MOSFET N-CH 55V 80A I2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STB80NF55L-08-1.pdf
(9 pages)
Specifications of STB80NF55L-08-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 4.5V
Input Capacitance (ciss) @ Vds
4350pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB80NF55L-08-1
Manufacturer:
FSC
Quantity:
5 000
Part Number:
STB80NF55L-08-1
Manufacturer:
ST
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
d(on)
Q
Q
d(off)
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
rr
gs
gd
r
f
g
rr
(2)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off-Delay Time
Fall Time
Parameter
Parameter
Parameter
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 3)
I
I
V
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
DD
G
G
= 4.7
= 4.7
= 80A, V
= 80A, di/dt = 100A/µs,
= 27V, I
= 27.5 V, I
= 4.5V
= 27V, I
= 20V, T
Test Conditions
Test Conditions
Test Conditions
V
V
D
D
GS
GS
j
GS
= 150°C
= 40A
= 40A,
D
= 0
= 4.5V
= 4.5V
= 80A,
Min.
Min.
Min.
Typ.
Typ.
Typ.
145
280
6.5
35
75
20
30
85
85
65
Max.
Max.
Max.
100
320
1.5
80
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
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