IRF8010STRLPBF International Rectifier, IRF8010STRLPBF Datasheet

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IRF8010STRLPBF

Manufacturer Part Number
IRF8010STRLPBF
Description
MOSFET N-CH 100V 80A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF8010STRLPBF

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
260W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
120nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
80A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 45A, 10V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
80 A
Power Dissipation
260 W
Mounting Style
SMD/SMT
Gate Charge Qg
81 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
MAXIM
Quantity:
5 122
Part Number:
IRF8010STRLPBF
Manufacturer:
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Quantity:
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Part Number:
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Quantity:
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Benefits
l
l
l
l
Applications
l
l
www.irf.com
I
I
I
P
V
dv/dt
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
Notes 
J
STG
D
GS
JC
JC
CS
JA
@ T
@ T
Effective C
App. Note AN1001)
and Current
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Typical R
@T
High frequency DC-DC converters
UPS and Motor Control
Switching Losses
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
through
DS(on)
OSS
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Case (end of life)
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mount, steady state)
ˆ
to Simplify Design, (See
are on page 8
= 12m
Parameter
Parameter
c
SMPS MOSFET
e
GS
GS
g
@ 10V
@ 10V
j
V
DSS
100V
Typ.
300 (1.6mm from case )
0.50
–––
–––
–––
-55 to + 175
HEXFET
IRF8010S
Max.
D
R
320
260
± 20
1.8
80
57
16
2
Pak
DS(on)
i
IRF8010S
IRF8010L
15m
Max.
®
0.57
0.80
–––
40
Power MOSFET
max
IRF8010L
PD - 94573
TO-262
Units
Units
W/°C
°C/W
V/ns
80A
°C
W
A
V
I
D
1

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IRF8010STRLPBF Summary of contents

Page 1

Applications High frequency DC-DC converters l l UPS and Motor Control Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) l Fully Characterized Avalanche Voltage ...

Page 2

IRF8010S/IRF8010L Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 12V 10V 1000 6.0V 5.5V 5.0V 4.5V BOTTOM 4.0V 100 10 1 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

IRF8010S/IRF8010L 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 1000 100 10 1 ...

Page 5

LIMITED BY PACKAGE 100 125 ° Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE ...

Page 6

IRF8010S/IRF8010L D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com IRF8010S/IRF8010L + ƒ - „ P.W. Period D ...

Page 8

IRF8010S/IRF8010L www.irf.com ...

Page 9

S & Ã Ã Ã Ã 8 Ã & Ã Ã ...

Page 10

IRF8010S/IRF8010L 2 TRR FEED DIRECTION TRL FEED DIRECTION NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. Notes: 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.  Repetitive rating; pulse width limited by max. junction ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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