IRF8010STRLPBF International Rectifier, IRF8010STRLPBF Datasheet - Page 9

• Manufacturer Part Number: IRF8010STRLPBF
• Description: MOSFET N-CH 100V 80A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8010STRLPBF

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 260W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 80A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 45A, 10V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 260 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 81 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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