irf8010 International Rectifier Corp., irf8010 Datasheet

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irf8010

Manufacturer Part Number
irf8010
Description
100v Single N-channel Hexfet Power Mosfet In A To-220ab Package
Manufacturer
International Rectifier Corp.
Datasheet

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Benefits
Applications
www.irf.com
I
I
I
P
V
dv/dt
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
Notes
D
D
DM
J
STG
D
GS
JC
CS
JA
@ T
@ T
Effective C
App. Note AN1001)
and Current
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Typical R
High frequency DC-DC converters
UPS and Motor Control
@T
Switching Losses
C
C
C
= 25°C
= 100°C Continuous Drain Current, V
= 25°C
through
DS(on)
OSS
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
to Simplify Design, (See
are on page 8
= 12m
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
DSS
100V
Typ.
0.50
300 (1.6mm from case )
–––
–––
-55 to + 175
HEXFET
1.1(10)
Max.
320
260
± 20
1.8
80
57
16
R
DS(on)
IRF8010
15m
Max.
0.57
–––
®
62
Power MOSFET
max
TO-220AB
PD - 94497
N•m (lbf•in)
Units
Units
W/°C
°C/W
V/ns
°C
W
80A
A
V
I
08/23/02
D
1

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irf8010 Summary of contents

Page 1

... SMPS MOSFET HEXFET V DSS 100V @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 1.1(10) Typ. ––– 0.50 ––– 94497 IRF8010 ® Power MOSFET R max I DS(on) D 15m 80A TO-220AB Max. Units 320 260 W 1.8 W/°C ± ...

Page 2

... IRF8010 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... TOP 100 BOTTOM 10 4.0V 1 0.1 10 100 Fig 2. Typical Output Characteristics 3 175°C 3.0 2.5 2.0 1.5 1.0 0.5 0.0 12.0 14.0 16.0 -60 -40 Fig 4. Normalized On-Resistance IRF8010 VGS 15V 12V 10V 6.0V 5.5V 5.0V 4.5V 4.0V 4.0V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) 80A = - 100 120 140 160 180 ° ...

Page 4

... IRF8010 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 1000 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° 0.1 0.0 0.5 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak T 0.001 0. Rectangular Pulse Duration (sec) 1 IRF8010 D.U. µ d(off ...

Page 6

... IRF8010 D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 600 15V 500 DRIVER 400 + 300 200 100 ...

Page 7

... Ground Plane Low Leakage Inductance Current Transformer - - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® Power MOSFETs IRF8010 + =10V ...

Page 8

... IRF8010 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH TO-220AB Part Marking Information EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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