STB30NF20 STMicroelectronics, STB30NF20 Datasheet - Page 11

• Manufacturer Part Number: STB30NF20
• Description: MOSFET N-CH 200V 30A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB30NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1597pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 0.065ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7946-2; STB30NF20

STP30NF20 - STW30NF20 - STB30NF20
DIM.
øP
øR
A1
b1
b2
L1
L2
A
D
E
S
b
c
e
L
19.85
15.45
14.20
4.85
2.20
0.40
3.70
3.55
4.50
MIN.
1.0
2.0
3.0
TO-247 MECHANICAL DATA
18.50
5.45
5.50
mm.
TYP
20.15
15.75
14.80
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.140
0.177
0.19
0.14
MIN.
Package mechanical data
0.214
0.728
0.216
TYP.
inch
0.102
0.055
0.094
0.134
0.793
0.620
0.582
0.143
0.216
MAX.
0.20
0.03
0.17
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