STB30NF20 STMicroelectronics, STB30NF20 Datasheet - Page 5

• Manufacturer Part Number: STB30NF20
• Description: MOSFET N-CH 200V 30A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB30NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1597pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 0.065ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7946-2; STB30NF20

STP30NF20 - STW30NF20 - STB30NF20
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
RRM
RRM
I
SD
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
V
I
V
V
R
(see Figure 16)
V
R
(see Figure 16)
SD
SD
SD
DD
DD
DD
DD
G
G
=30A, V
=30A, di/dt = 100A/µs,
=30A, di/dt = 100A/µs,
=4.7Ω, V
=4.7Ω, V
=100 V, Tj=25°C
=100 V, Tj=150°C
=100V, I
=100V, I
Test conditions
Test conditions
GS
D
D
GS
GS
=0
=15A,
=15A,
=10V
=10V
Electrical characteristics
Min.
Min.
Typ.
15.7
Typ.
0.96
12.4
1.42
14.6
155
194
8.8
35
38
Max.
Max.
120
1.5
30
Unit
Unit
ns
ns
ns
ns
µC
µC
ns
ns
A
A
V
A
A
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