IRF3711ZPBF International Rectifier, IRF3711ZPBF Datasheet - Page 5

• Manufacturer Part Number: IRF3711ZPBF
• Description: MOSFET N-CH 20V 92A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3711ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 92A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2150pF @ 10V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.3 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 92 A
• Power Dissipation: 79 W
• Mounting Style: Through Hole
• Gate Charge Qg: 16 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3711ZPBF

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0.001
100
0.01
80
60
40
20
0.1
10
0
Fig 9. Maximum Drain Current vs.
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
0.10
0.05
0.02
50
Case Temperature
0.01
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
LIMITED BY PACKAGE
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
Fig 10. Threshold Voltage vs. Temperature
τ
J
τ
1
2.5
2.0
1.5
1.0
0.5
0.0
Ci= τi/Ri
τ
1
Ci= i/Ri
-75 -50 -25
R
0.001
1
R
1
τ
2
τ
R
2
2
R
2
T J , Temperature ( °C )
0
R
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
3
R
τ
3
3
25
τ
C
τ
I D = 250µA
50
Ri (°C/W)
0.01
0.805
0.606
0.492
75
100 125 150 175
0.000237
0.001005
0.101628
τi (sec)
5
0.1