IRF3711ZPBF International Rectifier, IRF3711ZPBF Datasheet - Page 3

• Manufacturer Part Number: IRF3711ZPBF
• Description: MOSFET N-CH 20V 92A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3711ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 92A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2150pF @ 10V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.3 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 92 A
• Power Dissipation: 79 W
• Mounting Style: Through Hole
• Gate Charge Qg: 16 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3711ZPBF

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1000
1000
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
100
0.1
10
10
1
1
0.1
2.0
TOP
BOTTOM 2.5V
3.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
4.0
T J = 25°C
5.0
1
V DS = 10V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25°C
2.5V
T J = 175°C
6.0
7.0
8.0
10
1000
100
10
1
2.0
1.5
1.0
0.5
0.1
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
-60 -40 -20 0
TOP
BOTTOM 2.5V
I D = 30A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
VGS
T J , Junction Temperature (°C)
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
vs. Temperature
20 40 60 80 100 120 140 160 180
1
20µs PULSE WIDTH
Tj = 175°C
2.5V
3
10