IRF3711ZPBF International Rectifier, IRF3711ZPBF Datasheet - Page 4

• Manufacturer Part Number: IRF3711ZPBF
• Description: MOSFET N-CH 20V 92A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3711ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 92A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2150pF @ 10V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.3 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 92 A
• Power Dissipation: 79 W
• Mounting Style: Through Hole
• Gate Charge Qg: 16 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3711ZPBF

4
1000.0
10000
100.0
1000
100
10.0
1.0
0.1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
V GS = 0V,
C iss
C rss
C oss = C ds + C gd
Forward Voltage
0.5
= C gs + C gd , C ds
= C gd
Coss
Crss
Ciss
T J = 25°C
1.0
f = 1 MHZ
10
1.5
SHORTED
V GS = 0V
2.0
100
2.5
1000
100
12
10
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0
0.1
I D = 12A
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
10
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 18V
VDS= 10V
10.0
20
10msec
100µsec
1msec
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100.0
30
1000.0
40