STB100NF04T4 STMicroelectronics, STB100NF04T4 Datasheet - Page 8

• Manufacturer Part Number: STB100NF04T4
• Description: MOSFET N-CH 40V 120A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB100NF04T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0046 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 150 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5951-2

Electrical characteristics
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Figure 13. Thermal Resistance Rthj-pcb vs.
Figure 15. Max Power Dissipation vs. PCB
PCB Copper Area
Copper Area
Figure 14. Thermal Impedance
Figure 16. Safe Operating Area
STB100NF04 - STP100NF04