IRF6665TR1PBF International Rectifier, IRF6665TR1PBF Datasheet - Page 4

• Manufacturer Part Number: IRF6665TR1PBF
• Description: MOSFET N-CH 100V 4.2A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6665TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SH
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.2 A
• Power Dissipation: 42 W
• Gate Charge Qg: 8.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6665TR1PBFTR

IRF6665PbF
Fig 9. Maximum Drain Current vs. Ambient Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100
10
5
4
3
2
1
0
1
0.4
25
0.01
100
0.1
10
1
1E-006
0.6
V SD , Source-to-Drain Voltage (V)
T A , Ambient Temperature (°C)
50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.8
0.05
0.02
0.01
0.10
0.20
75
1E-005
1.0
SINGLE PULSE
( THERMAL RESPONSE )
100
T J = -40°C
T J = 25°C
T J = 150°C
1.2
V GS = 0V
0.0001
125
1.4
150
1.6
t 1 , Rectangular Pulse Duration (sec)
τ
J
0.001
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
R
1
R
1
0.01
τ
2
τ
R
2
2
R
2
R
τ
3
3
R
τ
3
3
Fig 10. Threshold Voltage vs. Temperature
1000
0.1
0.01
5.5
5.0
4.5
4.0
3.5
3.0
2.5
100
0.1
10
τ
R
4
1
-75
τ
4
R
4
4
0
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 250µA
I D = 1.0mA
I D = 1.0A
-50
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
R
5
τ
5
R
5
V DS , Drain-to-Source Voltage (V)
5
DC
-25
1
τ
A
τ
T J , Temperature ( °C )
A
1
Ri (°C/W)
0
1.6195
2.1406
22.2887
20.0457
11.9144
10msec
25
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
10
1msec
50
0.375850
7.410000
0.000126
0.001354
ƒ
100µsec
99
τi (sec)
75
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100
100
100
125 150
1000