IRF6665TR1PBF International Rectifier, IRF6665TR1PBF Datasheet

IRF6665TR1PBF

Manufacturer Part Number

IRF6665TR1PBF

Description

MOSFET N-CH 100V 4.2A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6665TRPBF.pdf (10 pages)

Specifications of IRF6665TR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

62 mOhm @ 5A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

4.2A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

13nC @ 10V

Input Capacitance (ciss) @ Vds

530pF @ 25V

Power - Max

2.2W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric SH

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

4.2 A

Power Dissipation

42 W

Gate Charge Qg

8.7 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6665TR1PBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6665TR1PBF

Manufacturer:

Quantity:

1 800

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6665TR1PBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 10
Download datasheet (234Kb)

Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)

Notes through

www.irf.com

Features

• Latest MOSFET Silicon technology

• Key parameters optimized for Class-D audio amplifier

• Low R

• Low Q

• Low package stray inductance for reduced ringing and lower

• Can deliver up to 100W per channel into 8Ω with no heatsink Š

• Dual sided cooling compatible

· Compatible with existing surface mount technologies

· RoHS compliant containing no lead or bromide

·Lead-Free (Qualified up to 260°C Reflow)

Absolute Maximum Ratings

Thermal Resistance

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the

latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse

recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as

efficiency, THD, and EMI.

The IRF6665PbF device utilizes DirectFET

inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI

performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The

DirectFET

tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for

Class-D audio amplifier applications.

EMI

STG

θJA

θJC

θJ-PCB

applications

@ T

S Q

= 25°C

= 70°C

= 25°C

= 70°C

DS(on)

= 25°C

for better THD and improved efficiency

for better THD and lower EMI

package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-

for improved efficiency

S X

are on page 2

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Case

Junction-to-PCB Mounted

S T

S H

Parameter

packaging technology. DirectFET

M Q

@ 10V

M X

M T

IRF6665TRPbF

DS(on)

G(int)

typ.

Typ.

12.5

–––

1.4

typ.

typ. @ V

packaging technology offers lower parasitic

IRF6665PbF

M N

-40 to + 150

Max.

0.017

Key Parameters

± 20

100

4.2

3.4

2.2

1.4

= 10V

Max.

–––

3.0

package is compatible

DirectFET™ ISOMETRIC

100

8.7

1.9

Units

W/°C

°C/W

°C

08/25/06

Related parts for IRF6665TR1PBF

IRF6665TR1PBF Summary of contents

Page 1

Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low R for improved efficiency DS(on) • Low Q for better THD and improved efficiency g • Low Q for better THD and lower ...

Page 2

IRF6665PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 -40° 25° 150°C ...

Page 4

IRF6665PbF 100 -40° 25° 150°C 1 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

125°C 100 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V L V ...

Page 6

IRF6665PbF Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 17a. Gate Charge Test Circuit + ‚ - Driver Gate Drive D.U.T. ...

Page 7

DirectFET™ Substrate and PCB Layout, SH Outline (Small Size Can, H-Designation). Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs www.irf.com G = GATE ...

Page 8

IRF6665PbF ™ Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs. ™ 8 DIMENSIONS METRIC IMPERIAL MAX MIN CODE MIN MAX A 4.85 0.187 4.75 0.191 ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6665TRPBF). For 1000 parts on 7" reel, order IRF6665TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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