IRF6665 International Rectifier, IRF6665 Datasheet

MOSFET N-CH 100V DIRECTFET-SH

IRF6665

Manufacturer Part Number
IRF6665
Description
MOSFET N-CH 100V DIRECTFET-SH
Manufacturer
International Rectifier
Datasheet

Specifications of IRF6665

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
62 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
530pF @ 25V
Power - Max
2.2W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric SH
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
62 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.2 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
4.3 ns
Minimum Operating Temperature
- 40 C
Rise Time
2.8 ns
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6665
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF6665PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF6665TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF6665TR1PBF
Manufacturer:
IR
Quantity:
1 800
Part Number:
IRF6665TR1PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF6665TRPBF
Manufacturer:
IR
Quantity:
20 000
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
Notes  through
www.irf.com
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
• Low R
• Low Q
• Low Q
• Low package stray inductance for reduced ringing and lower
• Can deliver up to 100W per channel into 8Ω with no heatsink Š
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
Absolute Maximum Ratings
V
V
I
I
I
I
P
P
P
T
T
Thermal Resistance
R
R
R
R
R
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET TM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFET TM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
D
D
D
DM
EMI
DS
GS
D
D
D
J
STG
θJA
θJA
θJA
θJC
θJ-PCB
applications
@ T
@ T
@ T
@T
@T
@T
S Q
C
A
A
C
A
A
= 25°C
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
= 25°C
g
rr
for better THD and improved efficiency
for better THD and lower EMI
for improved efficiency
S X
Š
are on page 2
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
S T
S H
jk
e
e
Parameter
Parameter
ek
hk
ik
M Q
GS
GS
GS
@ 10V
@ 10V
@ 10V
M X
M T
V
R
Q
R
DS
DS(on)
g
G(int)
typ.
Typ.
12.5
–––
–––
1.4
20
typ.
typ. @ V
M N
-40 to + 150
SH
Max.
0.017
Key Parameters
± 20
100
4.2
3.4
2.2
1.4
19
34
42
GS
= 10V
Max.
IRF6665
–––
–––
–––
3.0
58
DirectFET™ ISOMETRIC
100
8.7
1.9
53
Units
Units
W/°C
°C/W
°C
W
V
A
11/16/05
m:
nC
V
1

Related parts for IRF6665

IRF6665 Summary of contents

Page 1

... Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients ...

Page 2

... IRF6665 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage R Internal Gate Resistance ...

Page 3

... TOP 15V 10V 9.0V 8.0V 7.0V BOTTOM 6.0V 100 1000 10 12 Fig 4. Normalized On-Resistance vs. Temperature 100 Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage IRF6665 100 TOP BOTTOM 10 6.0V 1 ≤ 60µs PULSE WIDTH Tj = 150°C 0.1 0 100 Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 2 ...

Page 4

... IRF6665 100 -40° 25° 150°C 1 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 ...

Page 5

... Fig 15a. Unclamped Inductive Test Circuit V (BR)DSS Fig 15b. Unclamped Inductive Waveforms ≤ 1 ≤ 0.1 % Fig 16a. Switching Time Test Circuit www.irf.com 5. DRIVER + Fig 14. Maximum Avalanche Energy vs. Drain Current 90 IRF6665 120 125°C 100 25° Drain Current (A) Fig 13. On-Resistance vs. Drain Current 50 TOP 40 BOTTOM 5. ...

Page 6

... IRF6665 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 17a. Gate Charge Test Circuit + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent Fig 18. 6 Vds Vgs(th) Qgs1 Qgs2 Fig 17b ...

Page 7

... DirectFET™ Substrate and PCB Layout, SH Outline (Small Size Can, H-Designation). Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs. www.irf.com IRF6665 7 ...

Page 8

... IRF6665 ™ Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs. Note: Controlling dimensions are in mm. ™ 8 DIMENSIONS METRIC IMPERIAL MAX MIN CODE MIN MAX 4.85 A 0.187 4 ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6665). For 1000 parts on 7" reel, order IRF6665TR1 CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords