IRF6645 International Rectifier, IRF6645 Datasheet - Page 8

• Manufacturer Part Number: IRF6645
• Description: MOSFET N-CH 100V DIRECTFET-SJ
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6645

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 890pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SJ
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 5.1 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 5 ns
• Lead Free Status / Rohs Status: No

DirectFET™ Outline Dimension, SJ Outline
(Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
IRF6645
DirectFET™ Part Marking
8
CODE
A
B
C
D
E
F
G
H
K
L
M
N
P
4.75
3.70
2.75
0.35
0.58
0.58
0.68
0.68
0.98
2.28
0.48
0.03
0.08
MIN
METRIC
DIMENSIONS
1.02
4.85
3.95
2.85
0.45
0.62
0.62
0.72
0.72
2.32
0.58
0.08
0.17
MAX
0.187
0.146
0.108
0.014
0.023
0.023
0.027
0.027
0.039
0.090
0.019
0.001
0.003
MIN
IMPERIAL
0.191
0.156
0.112
0.018
0.024
0.024
0.028
0.028
0.040
0.091
0.023
0.003
0.007
MAX
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