IRF6645 International Rectifier, IRF6645 Datasheet - Page 7

• Manufacturer Part Number: IRF6645
• Description: MOSFET N-CH 100V DIRECTFET-SJ
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6645

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 890pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SJ
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 5.1 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 5 ns
• Lead Free Status / Rohs Status: No

DirectFET™ Substrate and PCB Layout, SJ Outline
(Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
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Fig 18.
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G = GATE
D = DRAIN
S = SOURCE
-
G
„
+
HEXFET
+
-
D
D
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
G
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
S
S
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
for N-Channel
D
D
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
IRF6645
=10V
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