IRF6645 International Rectifier, IRF6645 Datasheet - Page 2
![MOSFET N-CH 100V DIRECTFET-SJ](/photos/13/92/139254/irf6614tr1pbf_sml.jpg)
IRF6645
Manufacturer Part Number
IRF6645
Description
MOSFET N-CH 100V DIRECTFET-SJ
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6645.pdf
(10 pages)
Specifications of IRF6645
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
4.9V @ 50µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
890pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric SJ
Configuration
Single Quad Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
35 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
5.1 ns
Minimum Operating Temperature
- 40 C
Rise Time
5 ns
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF6645TR1PBF
Manufacturer:
ATMEL
Quantity:
1 200
Company:
Part Number:
IRF6645TR1PBF
Manufacturer:
International Rectifier
Quantity:
1 975
Part Number:
IRF6645TRPBF
Manufacturer:
IR
Quantity:
20 000
Notes:
IRF6645
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
Electrical Characteristic @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
Q
Q
Q
Q
sw
oss
rr
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by max. junction temperature.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
gs2
J
+ Q
= 25°C (unless otherwise specified)
gd
)
Min.
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
7.4
Typ.
Typ.
0.12
–––
–––
–––
–––
–––
–––
–––
890
180
870
100
–––
–––
–––
-12
4.8
5.3
5.6
7.2
1.0
9.2
5.0
5.1
3.1
0.8
28
14
18
40
31
40
Max. Units
Max. Units
-100
–––
–––
250
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.9
7.2
1.3
35
20
20
25
45
47
60
mV/°C
V/°C
mΩ
µA
nA
nC
nC
nC
pF
ns
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 15
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs c
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
GS
GS
G
= 3.4A
= 3.4A
= 25°C, I
= 25°C, I
=6.2Ω
= V
= 100V, V
= 80V, V
= 10V, I
= 50V
= 16V, V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 50V, V
= 0V
= 0V, V
= 0V, V
GS
, I
Conditions
Conditions
D
S
F
D
DS
DS
D
D
= 250µA
GS
GS
GS
= 3.4A, V
= 3.4A, V
= 50µA
= 3.4A
= 5.7A c
GS
= 1.0V, f=1.0MHz
= 80V, f=1.0MHz
= 0V, T
= 0V
= 10V c
= 0V
www.irf.com
D
= 1mA
DD
GS
J
G
= 125°C
= 0V c
= 50V
D
S