IRF6637 International Rectifier, IRF6637 Datasheet - Page 5

• Manufacturer Part Number: IRF6637
• Description: MOSFET N-CH 30V 14A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6637

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.7 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1330pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MP
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.7 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 3.8 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
www.irf.com
1000.0
100.0
10.0
60
50
40
30
20
10
1.0
0.1
0
25
0.2
T J = 150°C
T J = 25°C
T J = -40°C
V SD , Source-to-Drain Voltage (V)
50
0.4
T C , Case Temperature (°C)
75
0.6
Fig 14. Maximum Avalanche Energy Vs. Drain Current
100
0.8
V GS = 0V
160
120
80
40
125
0
1.0
25
Starting T J , Junction Temperature (°C)
150
1.2
50
75
100
TOP
BOTTOM
Fig 13. Typical Threshold Voltage vs. Junction
125
1000
2.5
2.0
1.5
1.0
100
4.9A
7.5A
0.1
11A
10
I D
1
-75
0.10
Fig11. Maximum Safe Operating Area
150
T A = 25°C
Tj = 150°C
Single Pulse
-50
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature ( °C )
-25
Temperature
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1.00
0
25
100µsec
50
IRF6637
1msec
I D = 250µA
10msec
10.00
75
100 125
100.00
5
150