IRFR2307ZPBF International Rectifier, IRFR2307ZPBF Datasheet - Page 5

• Manufacturer Part Number: IRFR2307ZPBF
• Description: MOSFET N-CH 75V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR2307ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2190pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 42 A
• Gate Charge, Total: 50 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 110 W
• Resistance, Drain To Source On: 12.8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 44 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 30 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 16 m Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 53 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 29 ns
• Gate Charge Qg: 50 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 65 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR2307ZPBF

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0.001
0.01
0.1
60
50
40
30
20
10
10
0
1
Fig 9. Maximum Drain Current vs.
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.20
0.10
0.05
0.02
0.01
Case Temperature
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
LIMITED BY PACKAGE
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
J
2.5
2.0
1.5
1.0
0.5
J
1
Ci= i Ri
1
Ci
Fig 10. Normalized On-Resistance
-60 -40 -20 0
0.001
i Ri
I D = 32A
V GS = 10V
R
1
R
1
T J , Junction Temperature (°C)
2
R
vs. Temperature
2
2
R
2
20 40 60 80 100 120 140 160 180
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
C
Ri (°C/W)
0.01
0.7938 0.000499
0.6257 0.005682
i (sec)
5
0.1