IRFR2307ZPBF International Rectifier, IRFR2307ZPBF Datasheet

MOSFET N-CH 75V 42A DPAK

IRFR2307ZPBF

Manufacturer Part Number
IRFR2307ZPBF
Description
MOSFET N-CH 75V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRFU2307ZPBF.pdf (11 pages)
2.IRFR2307ZPBF.pdf (4 pages)

Specifications of IRFR2307ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
75nC @ 10V
Input Capacitance (ciss) @ Vds
2190pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current, Drain
42 A
Gate Charge, Total
50 nC
Package Type
D-Pak (TO-252AA)
Polarization
N-Channel
Power Dissipation
110 W
Resistance, Drain To Source On
12.8 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
44 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
30 S
Voltage, Breakdown, Drain To Source
75 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
16 m Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
53 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
29 ns
Gate Charge Qg
50 nC
Minimum Operating Temperature
- 55 C
Rise Time
65 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFR2307ZPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR2307ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Description
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Features
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
JA
JA
@ T
@ T
@ T
@T
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
(Tested )
Advanced Process Technology
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
Ã
Parameter
Parameter
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
i
(Silicon Limited)
(Package Limited)
h
G
IRFR2307ZPbF
IRFR2307ZPbF
IRFU2307ZPbF
D-Pak
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
–––
HEXFET
S
D
-55 to + 175
Max.
0.70
± 20
210
110
100
140
53
38
42
IRFU2307ZPbF
®
R
Power MOSFET
DS(on)
V
I-Pak
Max.
1.42
DSS
110
I
50
D
= 42A
PD - 96191B
= 16m
= 75V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

Related parts for IRFR2307ZPBF

Image
Part Number
Description
Manufacturer
Datasheet
Request R
IRFR230
Part Number:
IRFR230
Description:
Manufacturer:
International Rectifier Corp.
80CNQ045
Part Number:
80CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
80CNQ045.pdf (6 pages)
82CNQ030
Part Number:
82CNQ030
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
82CNQ030.pdf (6 pages)
85CNQ015
Part Number:
85CNQ015
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
85CNQ015.pdf (8 pages)
200CNQ035
Part Number:
200CNQ035
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
200CNQ035.pdf (5 pages)
120NQ045
Part Number:
120NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
120NQ035R.pdf (5 pages)
400CNQ045
Part Number:
400CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
400CNQ045.pdf (4 pages)
63CNQ100
Part Number:
63CNQ100
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
63CNQ100.pdf (2 pages)
123NQ080
Part Number:
123NQ080
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
123NQ080.pdf (5 pages)
301CNQ045
Part Number:
301CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
301CNQ045.pdf (5 pages)
125NQ015
Part Number:
125NQ015
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
125NQ015.pdf (4 pages)
301CNQ040
Part Number:
301CNQ040
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
301CNQ045.pdf (5 pages)
123NQ100
Part Number:
123NQ100
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
123NQ080.pdf (5 pages)
241NQ045
Part Number:
241NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
241NQ045.pdf (5 pages)
181NQ045
Part Number:
181NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
181NQ045.pdf (4 pages)

IRFR2307ZPBF Summary of contents

Page 1

... Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance j R Junction-to-Case JC R Junction-to-Ambient (PCB mount Junction-to-Ambient JA ® www.irf.com IRFR2307ZPbF IRFU2307ZPbF G IRFR2307ZPbF Parameter @ 10V (Silicon Limited 10V GS @ 10V (Package Limited Parameter 96191B ® HEXFET Power MOSFET 75V ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 100 6.0V 5.5V 5.0V BOTTOM 4. 4.5V 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 3000 C iss 2000 1000 C ...

Page 5

LIMITED BY PACKAGE 100 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 120 TOP Single Pulse BOTTOM 1% Duty Cycle 100 32A ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: THIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 IN THE ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" ssembly line position indicates "Lead-Free" qualification ...

Page 10

EXAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 2001 IN THE ASS EMB LY LINE "A" Note: "P" in ass embly line pos ition indicates Lead-Free" OR Notes: 1. ...

Page 11

NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO ...

Related keywords