IRFR2307ZPBF International Rectifier, IRFR2307ZPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR2307ZPBF
• Description: MOSFET N-CH 75V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR2307ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2190pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 42 A
• Gate Charge, Total: 50 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 110 W
• Resistance, Drain To Source On: 12.8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 44 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 30 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 16 m Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 53 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 29 ns
• Gate Charge Qg: 50 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 65 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR2307ZPBF

1000.00
4
100.00
4000
3000
2000
1000
10.00
1.00
0.10
0
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
0.4
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
V SD , Source-to-Drain Voltage (V)
C rss
C oss
C iss
Forward Voltage
0.6
0.8
T J = 25°C
f = 1 MHZ
10
1.0
1.2
V GS = 0V
1.4
100
1.6
1000
100
0.1
Fig 8. Maximum Safe Operating Area
10
20
16
12
1
8
4
0
Fig 6. Typical Gate Charge vs.
1
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 32A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
V DS = 60V
VDS= 38V
VDS= 15V
1msec
10
DC
40
100µsec
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60
100
80