IRF7703TRPBF International Rectifier, IRF7703TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7703TRPBF
• Description: MOSFET P-CH 40V 6A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7703TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5220pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 6 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 41 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7703TRPBF; IRF7703TRPBFTR

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3.0
2.5
2.0
1.5
1.0
Fig 15. Typical Threshold Voltage Vs.
-75
-50
Junction Temperature
-25
T J , Temperature ( °C )
0
25
50
I D = -250µA
75
100
125
150
150
130
110
90
70
50
30
10
0.00
Fig 16. Typical Power Vs. Time
Time (sec)
0.01
7
0.10