IRF7703TRPBF International Rectifier, IRF7703TRPBF Datasheet

MOSFET P-CH 40V 6A 8-TSSOP

IRF7703TRPBF

Manufacturer Part Number
IRF7703TRPBF
Description
MOSFET P-CH 40V 6A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7703TRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 4.5V
Input Capacitance (ciss) @ Vds
5220pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
45 mOhms
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 6 A
Power Dissipation
1.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
41 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7703TRPBF
IRF7703TRPBFTR
Thermal Resistance
l
l
l
l
l
l
Description
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
θJA
@ T
@ T
P-Channel MOSFET
@T
@T
T
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
®
Power MOSFETs from International Rectifier
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Parameter
Parameter
provides the de-
ƒ
ƒ
GS
GS
ƒ
@ -10V
@ -10V
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Ã2ÃB
V
-40V
DSS
B
9
R
HEXFET
'Ã2Ã9
&Ã2ÃT
$Ã2Ã9
%Ã2ÃT
DS(on)
IRF7703PbF
-55 to + 150
45@V
28@V
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&
%
$
Max.
Max.
0.012
0.96
-6.0
-4.7
± 20
83
-40
-24
1.5
GS
GS
max (mW)
®
= -4.5V
= -10V
Power MOSFET
TSSOP-8
PD-96026A
-6.0A
-4.8A
05/15/09
Units
Units
I
W/°C
°C/W
D
°C
V
A
V
1

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IRF7703TRPBF Summary of contents

Page 1

... Lead-Free l Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, signer with an extremely efficient and reliable device for battery and load management ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP -15V -10V 1000 -4.5V -3.7V -3.5V -3.3V 100 -3.0V BOTTOM -2. 0.1 -2.7V 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 1 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) ...

Page 6

-6.0A 0.03 0.02 0.01 3.0 5.0 7.0 9.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate ...

Page 7

Temperature ( °C ) Fig 15. Typical Threshold Voltage Vs. Junction Temperature www.irf.com 150 130 110 -250µ 0.00 ...

Page 8

TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! @ DI9@Y 6SF $ r 7 "Y ppp r 'YÃ iii hhh 8 'ÃTVSA G@69Ã6TTDB ...

Page 9

G@) UCDTÃDTÃ6IÃDSA''$! 7A GPUÃ8P9@ TSSOP-8 Tape and Reel Information A@@9Ã9DS@8UDPI 'À€ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com 6SUÃIVH7@S 96U@Ã8P9@Ã`XX  6TT@H7G`ÃTDU@Ã8P9@ Ã2ÃGrhqA…rrÃvqvph‡‚… à "Å %À€ IPU@T) ÃÃU6Q@ÃÉÃS@@GÃPVUGDI@Ã8PIAPSHTÃUPÃ@D6#' ÃÉÃ@D6$#  Data ...

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