IRF7706TRPBF International Rectifier, IRF7706TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7706TRPBF
• Description: MOSFET P-CH 30V 7A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7706TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1.51W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 7A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7A, 10V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 36 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 7 A
• Power Dissipation: 1.51 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7706
6
10 V
0.060
0.040
0.020
0.000
Fig 12. Typical On-Resistance Vs.
Fig 14a. Basic Gate Charge Waveform
V
2.0
G
Q
3.0
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
4.0
Q
Charge
Q
5.0
GD
G
6.0
I D = -7.0A
7.0
8.0
9.0
10.0
0.100
0.080
0.060
0.040
0.020
0.000
Fig 13. Typical On-Resistance Vs.
Fig 14b. Gate Charge Test Circuit
0
12V
V
5 10 15 20 25 30 35 40 45 50 55 60
GS
Same Type as D.U.T.
Current Regulator
.2 F
Drain Current
VGS = -4.5V
-I D , Drain Current ( A )
50K
-3mA
Current Sampling Resistors
.3 F
I
G
D.U.T.
www.irf.com
I
VGS = -10V
D
+
-
V
DS