IRF7706TRPBF International Rectifier, IRF7706TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7706TRPBF
• Description: MOSFET P-CH 30V 7A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7706TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1.51W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 7A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7A, 10V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 36 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 7 A
• Power Dissipation: 1.51 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
0.0001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.001
SINGLE PULSE
75
100
0.01
t , Rectangular Pulse Duration (sec)
125
1
°
0.1
150
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
1
GS
DS
R
Pulse Width
Duty Factor
G
V
t
V
d(on)
1. Duty factor D = t / t
2. Peak T = P
GS
Notes:
GS
V
DS
t
r
10
J
µs
DM
x Z
1
D.U.T.
thJA
P
2
DM
R
t
+ T
100
d(off)
D
IRF7706
A
t
1
t
f
t
2
+
-
V
DD
1000
5