IRF7706TRPBF International Rectifier, IRF7706TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7706TRPBF
• Description: MOSFET P-CH 30V 7A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7706TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1.51W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 7A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7A, 10V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 36 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 7 A
• Power Dissipation: 1.51 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
100
0.1
0.1
10
10
1
Fig 1. Typical Output Characteristics
1
Fig 3. Typical Transfer Characteristics
2.0
0.1
T = 150 C
J
-V
2.5
GS
-V DS , Drain-to-Source Voltage (V)
°
, Gate-to-Source Voltage (V)
T = 25 C
3.0
J
1
°
-2.5V
20µs PULSE WIDTH
Tj = 25°C
3.5
V
20µs PULSE WIDTH
DS
4.0
10
= -15V
TOP
BOTTOM -2.5V
4.5
VGS
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-10V
5.0
100
100
0.1
10
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
D
-7.0A
-V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
20µs PULSE WIDTH
Tj = 150°C
-2.5V
IRF7706
10
TOP
BOTTOM -2.5V
V
GS
°
=
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-10V
3
100