IRL3202PBF International Rectifier, IRL3202PBF Datasheet - Page 4

• Manufacturer Part Number: IRL3202PBF
• Description: MOSFET N-CH 20V 48A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3202PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 29A, 7V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2000pF @ 15V
• Power - Max: 69W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 48 A
• Gate Charge, Total: 43 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 69 W
• Resistance, Drain To Source On: 0.016 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 63 ns
• Time, Turn-on Delay: 9.8 ns
• Transconductance, Forward: 28 S
• Voltage, Breakdown, Drain To Source: 20 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±10 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 19 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 48 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 82 ns
• Gate Charge Qg: 28.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 100 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL3202PBF

4
1000
3500
3000
2500
2000
1500
1000
100
500
10
1
0
0.2
1
T = 150 C
J
V
V
SD
DS
°
0.8
,Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
C rss
C iss
C oss
=
=
=
=
0V,
C
C
C
T = 25 C
gs
gd
ds
J
1.4
+ C
+ C
10
f = 1MHz
gd ,
gd
°
C
ds
2.0
V
SHORTED
GS
= 0 V
2.6
100
1000
100
15
12
10
9
6
3
0
1
0
I =
1
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
29A
10
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
°
°
G
, Drain-to-Source Voltage (V)
20
30
BY R
V
10
DS(on)
DS
40
= 16V
100us
1ms
10ms
50
www.irf.com
60
70
100