IRL3202PBF International Rectifier, IRL3202PBF Datasheet - Page 3

• Manufacturer Part Number: IRL3202PBF
• Description: MOSFET N-CH 20V 48A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3202PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 29A, 7V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2000pF @ 15V
• Power - Max: 69W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 48 A
• Gate Charge, Total: 43 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 69 W
• Resistance, Drain To Source On: 0.016 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 63 ns
• Time, Turn-on Delay: 9.8 ns
• Transconductance, Forward: 28 S
• Voltage, Breakdown, Drain To Source: 20 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±10 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 19 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 48 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 82 ns
• Gate Charge Qg: 28.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 100 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL3202PBF

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1000
1000
100
100
10
10
1
1
0.1
2
TOP
BOTTOM
BOTTOM
V
V
DS
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.75V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
3
1
2.0V
T = 25 C
J
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
10
4
T = 150 C
= 15V
°
J
°
°
100
5
1000
100
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20
TOP
BOTTOM
BOTTOM
I =
D
V
48A
DS
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.75V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
0
1
20 40 60
2.0V
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
4.5V
3
100