IRL3202 International Rectifier, IRL3202 Datasheet

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IRL3202

Manufacturer Part Number
IRL3202
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet

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Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment.
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
V
E
I
E
dv/dt
T
T
R
R
R
AR
D
D
DM
AS
AR
J
STG
D
GS
qJA
GSM
qJC
qCS
@ T
@ T
@T
Advanced Process Technology
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
C
C
C
= 25°C
= 100°C
= 25°C
Power Dissipation
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
Advanced
PRELIMINARY
GS
GS
@ 4.5V
@ 4.5V
G
300 (1.6mm from case )
Typ.
0.50
–––
–––
10 lbf•in (1.1N•m)
HEXFET
-55 to + 150
S
D
TO-220AB
Max.
0.56
190
± 10
270
6.9
5.0
48
30
69
29
14
®
R
IRL3202
Power MOSFET
DS(on)
Max.
V
–––
1.8
62
DSS
I
D
= 48A
= 0.016W
PD 9.1695A
= 20V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
V
A
11/18/97

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IRL3202 Summary of contents

Page 1

... Case-to-Sink, Flat, Greased Surface qCS R Junction-to-Ambient qJA PRELIMINARY HEXFET G Advanced @ 4. 4.5V GS 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– PD 9.1695A IRL3202 ® Power MOSFET 20V DSS R = 0.016W DS(on 48A D S TO-220AB Max. Units ...

Page 2

... IRL3202 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient /DT DV (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics 1000 ° 100 ° ° 150 15V DS 20µs PULSE WIDTH 4 5 IRL3202 VGS TOP 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM BOTTOM 1.75V 100 10 2.0V 20µs PULSE WIDTH T = 150 ...

Page 4

... IRL3202 3500 iss 3000 rss oss ds 2500 C iss 2000 1500 C oss 1000 C 500 rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 150 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 600 500 400 300 200 100 0 125 150 25 ° Fig 10. Maximum Avalanche Energy 0.001 0. Rectangular Pulse Duration (sec) 1 IRL3202 TOP BOTTOM 50 75 100 Starting T , Junction Temperature Vs. Drain Current Notes: 1. Duty factor ...

Page 6

... IRL3202 0.018 VGS = 4.5V 0.016 0.014 0.012 0.010 Drain Current (A) D Fig 12. On-Resistance Vs. Drain Current VGS = 7. Fig 13. On-Resistance Vs. Gate Voltage 0.025 0.020 I D 0.015 0.010 0.0 2.0 4 Gate-to-Source V oltage ( 48A A 6.0 8.0 ...

Page 7

... GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRL3202 - B - 4.69 (.185 ) 4.20 (.165 ) 1.32 (.052) 1.22 (.048 ...

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