STB45NF06T4 STMicroelectronics, STB45NF06T4 Datasheet - Page 14

• Manufacturer Part Number: STB45NF06T4
• Description: MOSFET N-CH 60V 38A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB45NF06T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 19A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10314-2; STB45NF06T4

Revision history
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Revision history
Table 9.
09-Sep-2004
04-Feb-2005
17-Aug-2006
13-Nov-2006
05-Jul-2010
Date
Revision history
Revision
1
2
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5
Doc ID 7433 Rev 5
Preliminary version.
Complete version.
New template. No content change.
Inserted new value.
Updated
Section 2.1: Electrical characteristics
Changes
STB45NF06, STP45NF06
(curves).