IRF7853TRPBF International Rectifier, IRF7853TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7853TRPBF
• Description: MOSFET N-CH 100V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7853TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Vgs(th) (max) @ Id: 4.9V @ 100µA
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.3A, 10V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 28 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0
IRF7853PbF
I
AS
Fig 15a&b. Unclamped Inductive Test circuit
6
Fig 14a&b. Basic Gate Charge Test Circuit
Fig 12. On-Resistance vs. Drain Current
40
30
20
10
1K
t p
0
V GS = 10V
10
V
DUT
(BR)DSS
and Waveforms
and Waveform
L
20
I D , Drain Current (A)
VCC
30
T C = 125°C
T C = 25°C
R G
20V
V DS
V
GS
t p
40
V
I AS
G
D.U.T
0.01 Ω
L
Q
GS
50
Q
Charge
Q
GD
G
60
15V
DRIVER
70
+
-
V DD
A
2500
2000
1500
1000
Fig 13. On-Resistance vs. Gate Voltage
500
0
40
35
30
25
20
15
10
Fig 15c. Maximum Avalanche Energy
25
4
Starting T J , Junction Temperature (°C)
50
V GS , Gate-to-Source Voltage (V)
6
vs. Drain Current
8
75
10
100
TOP
BOTTOM
www.irf.com
T J = 125°C
12
T J = 25°C
I D = 5.0A
125
14
0.23A
0.34A
5.0A
I D
150
16