IRF7853TRPBF International Rectifier, IRF7853TRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF7853TRPBF
• Description: MOSFET N-CH 100V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7853TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Vgs(th) (max) @ Id: 4.9V @ 100µA
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.3A, 10V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 28 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7853PbF
SO-8 Tape and Reel
Notes:
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
8
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper
board, t
max. junction temperature.
Starting T
R
G
= 25Ω, I
≤
J
10 sec.
= 25°C, L = 49mH,
AS
= 5.0A.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
8.1 ( .318 )
7.9 ( .312 )
This product has been designed and qualified for the Industrial market.
TERMINAL NUMBER 1
(12.992)
330.00
MAX.
„
…
†
‡
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R
C
I
as C
SD
oss
θ
is measured at
≤ 5.0A, di/dt ≤ 320A/µs, V
eff. is a fixed capacitance that gives the same charging time
oss
Data and specifications subject to change without notice.
Visit us at www.irf.com for sales contact information.1/06
Qualification Standards can be found on IR’s Web site.
while V
DS
FEED DIRECTION
is rising from 0 to 80% V
J
12.3 ( .484 )
11.7 ( .461 )
14.40 ( .566 )
12.40 ( .488 )
DD
≤ V
(BR)DSS
TAC Fax: [phone]
, T
DSS
J
≤ 150°C.
.
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